VUO52-12NO1 3~ rectifier bridge standard rectifier module 4/5 6 1/2 810 part number VUO52-12NO1 features / advantages: applications: package: package with dcb ceramic reduced weight improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for three phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors v1-a-pack industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 rrm 1200 i60 fsm 350 dav v = v a a = = i 3~ rectifier ixys reserves the right to change limits, conditions and dimensions. 20130305b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO52-12NO1 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.13 r 1.3 k/w r min. 60 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 110 p tot 95 w t = 25c c r k/w 0.3 20 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.44 t = 25c vj 150 v f0 v 0.83 t = c vj 150 r f 11.5 m ? v 1.07 t = c vj i = a f v 20 1.50 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 350 380 450 425 a a a a 300 320 615 600 1200 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 ixys reserves the right to change limits, conditions and dimensions. 20130305b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO52-12NO1 ratings part number (typ) yywwa date code location lot no.: 2d data matrix vuo52-14no1 v1-a-pack 1400 package t vj c m d nm 2.5 mounting torque 2 t stg c 125 storage temperature -40 weight g 37 symbol definition typ. max. min. conditions virtual junction temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6.0 12.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 100 a per terminal 150 -40 terminal to terminal vuo52-16no1 vuo52-18no1 v1-a-pack v1-a-pack 1600 1800 vuo52-20no1 vuo52-22no1 vuo34-16no1 vuo34-18no1 v1-a-pack v1-a-pack v1-a-pack v1-a-pack 2000 2200 1600 1800 v 1-a-pack similar part package voltage class vuo52-08no1 v1-a-pack 800 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol VUO52-12NO1 461172 box 10 VUO52-12NO1 standard 3000 3600 isol threshold voltage v 0.83 m ? v 0 max r 0 max slope resistance * 10.2 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130305b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO52-12NO1 4/5 6 1/2 810 outlines v1-a-pack ixys reserves the right to change limits, conditions and dimensions. 20130305b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VUO52-12NO1 0 1 1 100 1000 v f [v] i f [a] 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 10 -3 10 -2 10 -1 10 0 100 150 200 250 300 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 0 25 50 75 100 125 150 0 5 10 15 20 25 0 5 10 15 20 25 30 0 25 50 75 100 125 150 0 20 40 60 80 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i davm [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 tversustimeperdiode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case constants for z thjc calculation: ir th (k/w) t i (s) 1 0.06070 0.008 20.173 0.05 3 0.3005 0.06 40.463 0.3 5 0.3028 0.15 0.8 x v rrm 50 hz t vj =25c t vj = 125c 150c t vj =130c t vj =45c t vj = 130c t vj =45c v r = 0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130305b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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